Miaoli Liao†
a,
Zeng Wu†b,
Liping Zheng*a,
Jiaxin Lana,
Ke Yana,
Yan Zhao*b and
Huajie Chen
*a
aKey Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, College of Chemistry, Xiangtan University, Xiangtan 411105, P. R. China. E-mail: zhenglp@xtu.edu.cn; chenhjoe@xtu.edu.cn
bLaboratory of Molecular Materials and Devices, Department of Materials Science, Fudan University, Shanghai 200438, P. R. China. E-mail: zhaoy@fudan.edu.cn
First published on 24th July 2025
A novel family of π-extended strong acceptor units, i.e., dibrominated acenaphthene imide derivatives (ANI-2Br), are synthesized by dehydrogenation of the saturated fused-pentagon rings in dibrominated acenaphthylene imide precursors (AI-2Br). With an unsaturated fused-pentagon ring, ANI-2Br is a 12 π-electron non-alternant conjugated system, featuring a remarkable extension of light absorption and π-conjugation compared to its alternant conjugated precursor AI-2Br (a 10 π-electron system). ANI-2Br exhibits a low-lying LUMO at −3.89 eV, showing a very high electron deficiency that surpasses that of most previously reported aromatic mono-imide acceptor motifs. Furthermore, we explore their application in the construction of electron-transporting polymers by alternative embedding of ANI or AI motifs with bithiazole derivatives (P1 and P2) or the thiophene-flanked diketopyrrolopyrrole derivatives (P3 and P4). Notably, the backbone configurations and optoelectronic properties of the resulting polymers can be significantly modulated by different fused-pentagon rings in ANI and AI motifs. Despite the small structural variation from AI to ANI, the copolymers incorporating strong ANI acceptor units exhibit significant differences compared to the analogous AI-based copolymers, including extended absorption band, narrowed bandgap, deep-positioned LUMO (approaching −3.91 eV), and improved carrier mobility. Charge-transport polarities varying from p-type to ambipolar and ultimately to n-type behavior are demonstrated for their film field-effect transistor devices. Among them, the best-performing polymer (P4) shows the highest electron mobility of 0.08 cm2 V−1 s−1. The results indicate that dehydrogenation-oxidation of the annulated pentagon rings in the AI and its derivatives is an effective strategy for creating non-alternant conjugated, strong acceptors and their structurally derived conjugated polymers, offering a new route to regulate their optoelectronic properties by different fused pentagon rings.
Donor–acceptor (D–A) type conjugated polymers are recognized as one of the most effective polymer systems for high-performance PSCs and PFETs.3,22–25 In these polymers, the HOMO and LUMO energies are predominantly determined by the D and A units, respectively. For example, improving the electron-donating ability of the D unit can improve the HOMO energies of the D–A type conjugated polymers.26 Regulation of their LUMO energies is generally carried out by selecting appropriate A units, the electron deficiencies of which are modified by functionalization of the A backbones with one or more electron-deficient groups; e.g., imide,1,2,27–30 amide,1,31 thiadiazole,32–34 pyrazine,35,36 ketone carbonyl,37,38 and boron-nitrogen (B ← N) coordination.39–41 In addition, attaching auxiliary electron-donating (e.g., thioalkyl and alkoxy groups)42,43 or electron-deficient substituent groups (e.g., F, Cl, and CN)18,44–48 onto the polymeric A units can further fine-tune their HOMO and LUMO energies, consequently realizing effective modulation of their optoelectronic properties. However, despite these conventional approaches, it remains very challenging to regulate the polymeric LUMO energies by a large margin, particularly with respect to changing their charge-transport polarity from p-type to n-type behavior. Considering that π-extended A building blocks featuring low-lying LUMO values are crucial for constructing high-performance electron-transporting (i.e., ambipolar and n-type) polymers, further development of novel design strategies to access such strong A motifs remains highly desirable.
Acenaphthene imide (ANI) is a class of π-extended A unit that is derived from the corresponding acenaphthylene imide (AI) precursor.49 The established method to prepare the N-alkylated ANI derivatives is based on a classic two-step procedure, namely, bromoethylation of the AI precursor followed by debromination-oxidation at high temperature.49 This two-step dehydrogenation route results in clear structural differences in the fused-pentagon rings of ANI and AI units. With an unsaturated pentagon ring, the ANI unit contains 12 π-electrons, thereby showing an extended π-conjugation compared to the parent AI unit, which shows a 10 π-electron system bearing a saturated pentagon ring. An interesting point is that the density functional theory (DFT) calculated LUMO energy of ANI is as low as −3.26 eV, which is lower by 0.83 eV than that of AI (−2.43 eV, Fig. 1), and even lower by 0.1 eV compared to the dicyano AI derivative (AI-2CN, −3.16 eV). This indicates that simple fusion of an unsaturated pentagon ring in the fused-ring π-system can improve electron affinity significantly; this dehydrogenation-oxidation strategy is expected to be more efficient and environmentally friendly than the conventional cyanidation-modification method when used to improve the electron deficiency of organic/polymeric semiconductors. As shown in Fig. 1, a comprehensive comparison of the DFT-calculated LUMO energies further reveals that ANI is a very strong acceptor unit, the electron affinity of which significantly surpasses most previously reported aromatic mono-imide units (e.g., PhI, BTI, AI, and CNI), aromatic amides (e.g., DPP, IID, 2FIID, and AIID), and partial aromatic diimides (e.g., BBTI, fFBTI2, and PMDI), and is even comparable to the classic strong acceptor NDI. In addition, the imide N-site of the AI unit allows N-alkylation, which can be used to regulate the solubility, film organization, and optoelectronic properties of the ANI-based conjugated polymers.50 With these interesting structures and properties, the ANI and its derivatives show great promise for the construction of high-performance conjugated polymers for use in organic electronic applications. However, previous reports rely on the use of conjugated small molecules bearing ANI subunits, exemplified by fused-ring diimides containing ANI subunits (e.g., BFI,51 FFTI,52 AFI,49 TCDADIs,50,53 and DCTI54) and cyano AI derivatives (DANI-2CN and ANI-2CN).55 To the best of our knowledge, no ANI-based conjugated polymers have been reported so far.
The difficulty in synthesizing such polymers lies primarily in the preparation of the dibrominated acenaphthene imide comonomer (ANI-2Br, Fig. 1) because direct bromination of the ANI unit tends to take place on the annulated CHCH handle instead of the naphthalene subunit. Herein, we report a versatile synthetic approach to access 2Br-ANI by dehydrogenation of the saturated CH2–CH2 handle in the dibrominated acenaphthylene imide (AI-2Br) precursor, which is synthesized by selective dibromination of the naphthalene subunit of the AI core. With both structural analogues (ANI-2Br and AI-2Br) in hand, we further studied their applications in the design and synthesis of four novel conjugated polymers (Fig. 1), including ANI and AI motifs copolymerized with bithiazole linkages (P1 and P2) or thiophene-flanked diketopyrrolopyrrole segments (P3 and P4). Comparative investigation indicated that the backbone configuration, absorption spectra, photoluminescence properties, HOMO/LUMO energies, as well as charge-transport performance of these polymers, can be significantly modulated by the different fused-pentagon rings embedded in the ANI and AI units. For example, the LUMO energies of the ANI-2Br monomer and both ANI-based copolymers (P2 and P4) were determined to be around −3.89, −3.80, and −3.91 eV, respectively, which are significantly lower than those of their AI-based counterparts; i.e., AI-2Br (−3.40 eV), P1 (−3.07 eV) and P3 (−3.37 eV). The charge-transport polarity varying from p-type to ambipolar, and ultimately to n-type behavior is thus demonstrated for these polymer-based transistor devices; of these, the best-performing polymer (P4) showed the highest electron mobility of 0.08 cm2 V−1 s−1.
With these dibromo comonomers in hand, we then explored their application in the synthesis of soluble low-band-gap conjugated polymers (Scheme 2). The ANI-containing polymers, P2 and P4, were synthesized through Pd-catalyzed Stille polymerization between the dibrominated ANI derivatives (4b or 4c) and the commercially-accessible distannylated monomers; i.e., 4,4′-bis(octyloxy)-2,2′-bis(trimethylstannyl)-5,5′-bithiazole (M1) or 2,5-bis(2-octyldodecyl)-3,6-bis(5-(trimethylstannyl)-thiophen-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione (M2). For comparison, the AI-containing polymers, P1 and P3, were also synthesized by Pd-catalyzed Stille polymerization of brominated AI derivatives (3b or 3c) with distannylated monomers (M1 or M2). The polymers were purified based on the commonly used precipitation and Soxhlet extraction techniques. The isolated yields of P1–P4 reached 90–92%, indicative of high reaction activity for these dibrominated fused-ring imide monomers.
The polymers are highly soluble in chlorinated solvents such as chloroform, chlorobenzene, and o-dichlorobenzene, which enabled full characterizations of their chemical structures, molecular weights, and optoelectronic properties in solution. Formation of the conjugated polymers was confirmed by high-temperature (150 °C) gel-permeation chromatography, in which the weight-average molecular weights of P1–P4 were determined to be 40.46, 66.30, 173.3, and 261.24 kDa, respectively, and their corresponding polydispersity indices ranged from 1.77 to 3.51 (Fig. S1). As shown in Fig. S32–S35, the high-temperature 1H NMR spectra of P1–P4 exhibit a series of low-resolution resonance signals, which is a common phenomenon caused by the strong aggregation between the adjacent, side-by-side aligned polymer backbones.28 In addition, the characteristic vibrational peaks of the imide groups in P1–P4 were examined by Fourier-transform infrared spectroscopy (Fig. S2), which gave spectra with strong carbonyl signals at 1664–1667 and 1704–1708 cm−1, respectively. Thermogravimetric analysis demonstrated outstanding thermal stability for these imide-functionalized polymers, showing thermal decomposition temperatures (Td, determined at 5% weight loss) higher than 460 °C (Fig. S3).
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Fig. 2 (a) Single-crystal structure of 4a. (b) Crystal stacking arrangement of 4a. The alkyl chains are omitted for clarity. |
Polymer | λmaxsol [nm] | λmaxfilm [nm] | λemsol [nm] | Eonsetox [V] | Eonsetred [V] | EHOMOa [eV] | ELUMOb [eV] | Ecvg![]() |
EHOMOd [eV] | ELUMOd [eV] | Ecalg![]() |
---|---|---|---|---|---|---|---|---|---|---|---|
a Estimated from EHOMO = – (Eonsetox+ 4.42) eV.28b Estimated from ELUMO = – (Eonsetred+ 4.42) eV.28c Estimated from Ecvg = – (EHOMO − ELUMO) eV.28d DFT-calculated values. | |||||||||||
P1 | 503 | 503 | 685 | 1.16 | −1.35 | −5.58 | −3.07 | 2.51 | −5.15 | −2.60 | 2.55 |
P2 | 731 | 732 | — | 1.22 | −0.62 | −5.64 | −3.80 | 1.84 | −5.28 | −3.41 | 1.87 |
P3 | 630, 687 | 630, 689 | 659, 735 | 1.19 | −1.05 | −5.61 | −3.37 | 2.24 | −5.19 | −3.09 | 2.10 |
P4 | 755 | 755 | — | 1.24 | −0.51 | −5.66 | −3.91 | 1.75 | −5.28 | −3.62 | 1.66 |
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Fig. 4 Ground-state molecular geometries, calculated HOMOs and LUMOs, and electrostatic potential (ESP) maps of the polymeric dimer models. |
To understand the absorption behavior in depth, time-dependent density functional theory (TD-DFT) calculations were carried out at the PBE0/def2-SVP level, based on the polymer dimer models (i.e., two repeating units of P1–P4). As shown in Fig. S7, the experimental and simulated absorption profiles of P1–P4 are highly similar, with the ANI-bearing P2 and P4 also showing clear red-shifts in both maximum peaks and absorption tails compared to the AI-bearing counterparts (P1 and P3). Among them, only P1 was calculated to exhibit a single absorption band at 400–800 nm (Fig. S8), matching well with the experimental data (Fig. 3a). This absorption band can be primarily attributed to the combined contributions from excited states S1, S2, and S4, which correspond to oscillator strengths (f) of 1.16, 0.34, and 0.81, respectively. For P2, the absorption peak in the long-wavelength region mainly originates from the excited state S1 (HOMO → LUMO, 95.3%, Fig. S9). Unlike the P3 solution, presenting two absorption peaks in 500–800 nm (Fig. 4b), only one absorption peak at around 610 nm was obtained by TD-DFT calculations (Fig. S10). This may be related to the combined contributions from the excited state S1 (HOMO → LUMO, 88.7%) and the excited state S2 (HOMO−1 → LUMO+1, 56.6% and HOMO−1 → LUMO, 26.7%). For P4, the maximum peak in the long-wavelength region mainly arises from S0 → S1 (HOMO → LUMO, 90.7%) with a large f value of 1.46 (Fig. S11). Therefore, the charge-transfer mechanisms underlying the absorption spectra of these polymers are effectively elucidated through TD-DFT calculations.
Photoluminescence (PL) spectra of P1–P4 in chlorobenzene were further examined at room temperature. As illustrated in Fig. S13, clear PL signals at around 600–850 nm are observed for the AI-bearing P1 and P3; moreover, the former shows a single PL peak at 685 nm, while the latter presents two PL peaks at 659 and 735 nm. In contrast to P1 and P3, the copolymerization of the C2-bridged ANI acceptor, yielding P2 and P4, results in quenching of fluorescence in solution. Clearly, the different PL behaviors of P1–P4 can be associated with different fused pentagon rings embedded in the AI and ANI motifs. In fact, a similar phenomenon has been reported for π-extended azaacenes bearing different five-membered rings.57,58 To be precise, the addition of a saturated CH2–CH2 handle to azaacenes yields strong fluorescence in both solution and the solid state, while the analogous azaacenes containing an unsaturated CHCH handle exhibit significantly weakened and even quenched fluorescence.
For the AI-bearing P1, both reduction and oxidation processes are irreversible (Fig. 3c). However, the ANI-bearing P2 presents two couples of strong and quasi-reversible electron-reduction waves coupled with an irreversible oxidation wave (Fig. 3c), similar to the redox character of the classic n-type NDI-based polymer N2200.60 Notably, the copolymerization of the strong acceptor ANI with the bithiazole linkage, yielding P2, significantly improves the electron affinity compared to the AI-bithiazole counterpart P1, as evidenced from a significant increase of Eonsetred (−0.62 V) compared to that of P1 (−1.35 V, Table 1). A similar phenomenon is observed by comparing the CV profiles of the DPP-bridged polymers P3 and P4, wherein the ANI-bearing P4 exhibits much stronger electron-reduction waves and much easier reduction of its π-system (Eonsetred, −0.51 V) than the AI-bearing P3 (Eonsetred, −1.05 V). The LUMO energies of P2 and P4 are thus calculated to be −3.80 and −3.91 eV, respectively, which are significantly lower than the corresponding AI-based counterparts P1 (−3.07 eV) and P3 (−3.37 eV). These results indicate that the conjugated copolymers (P1–P4), bearing different fused-pentagon rings in the ANI and AI acceptor motifs, show significant differences in their LUMO energies. In contrast, dehydrogenation-oxidation of the C2-bridge shows very small variations (only 0.05–0.06 V, Table 1) of the first oxidation potentials (Eonsetox) when going from the AI-bearing polymers to the ANI-bearing counterparts. As a result, the HOMO energies are determined to be around −5.60 eV for the four polymers (Fig. 3d). According to the electrochemically measured HOMO and LUMO energies, the band gaps of P1–P4 are calculated to be 2.51, 1.84, 2.24, and 1.75, respectively. It can be concluded that the conjugated polymers incorporating strong ANI acceptor units thus exhibit narrowing band gaps and extended light-capturing bands compared to those with relatively weak AI acceptor units.
The HOMO/LUMO values of P1–P4 were calculated to be −5.15/−2.60, −5.28/−3.41, −5.19/−3.09, and −5.28/−3.62 eV, respectively. These values are in good agreement with the trend of the electrochemically determined electron affinities and ionization potentials (Table 1 and Fig. 3d). That is to say, the dehydrogenation of the C2-bridge, yielding P2 and P4, results in a sharp decrease in the LUMO values relative to their analogues P1 and P3. Fig. 4 shows the FMOs of the four polymers. The HOMOs of P1 and P2 are mainly delocalized on the thiazole linkages and partially extend to the electron-rich regions of the naphthalene and acenaphthene subunits, while their LUMOs are distributed over the whole AI or ANI cores and partial thiazole linkages. Moreover, both HOMO and LUMO clouds in the part of the fused-pentagon rings of P2 are more remarkable than those of P1. This could indicate different charge-transfer characters of the excited states of P1 and P2, potentially explaining the different emission behaviors and red-shifted absoprtion bands when going from P1 to P2. For the DPP-linked P3 and P4, the HOMOs are mainly localized on the thiophene-flanked DPP moieties in both cases; the LUMOs are almost delocalized over the whole π-plane of P4, whereas for P3 it is localized on the partial DPP core and its adjacent thiophene and naphthalene subunits. The different FMO distributions could explain the variation of optical properties between the AI- and ANI-bearing polymers with different fused-pentagon rings.
Visualization of the surface electron distribution of P1–P4 was conducted by calculating the electrostatic potential (ESP) maps. As shown in Fig. 4, the fused-pentagon rings in both P2 and P4 show significant decreases in electrostatic potential compared to those of both P1 and P3, as indicated by the ESP colors in their C2-bridge regions, which shifted from deep blue to light pink. This suggests that the electron density of the ANI subunits is much higher than that of the AI subunits owing to the annulation of the second conjugated CHCH handle. These observations further explain why the ANI-bearing polymers exhibit more efficient intramolecular charge transfer and extended light-capturing bands than those of the AI-bearing polymers.
Furthermore, the nucleus-independent chemical shifts (NICS) were calculated to elucidate the effect of different fused-pentagon rings embedded in both AI and ANI-bearing π-systems on their electron-deficiency and aromaticity characteristics.61 To simplify these calculations, methyl-substituted model structures (i.e., AI, ANI, AI-2Br, and ANI-2Br) were adopted. The NICS(1.7)ZZ calculations were carried out by adopting ghost atoms placed at 1.7 Å above the center of each ring plane and using the gauge-independent atomic orbital (GIAO) method at the B3LYP/6-311+G(d,p) level. As shown in Fig. S12, the strong aromaticity character of the naphthalenyl subunits in both AI and AI-2Br units is supported by the negative NICS(1.7)ZZ values (−20.22 to −18.61 ppm), which are more negative compared to their nonaromatic saturated pentagon rings (−6.92 to −5.64 ppm). Interestingly, the unsaturated pentagon rings embedded in both ANI and ANI-2Br units seem to exhibit an antiaromatic nature with near-zero NICS(1.7)ZZ values of −3.24 and −3.21 ppm, respectively. Note that simple fusion of an antiaromatic pentagon ring into ANI or ANI-2Br results in weakened aromaticity of their naphthalenyl subunits (−17.29 to −15.11 ppm). Clearly, ANI and its structural derivatives are non-alternant π-conjugated systems containing electron-poor unsaturated fused-pentagon rings, thereby leading to significantly increased electron deficiency compared to that of their AI-bearing counterparts. In fact, a series of all-carbon type non-alternant π-systems, such as C60, have previously been shown to behave as electron-transporting materials for organic optoelectronic devices, which is due to their high electron affinity induced by unique non-alternant π-conjugation structures and multiple electron-poor fused-pentagon rings.62–65
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Fig. 5 (a) PFET device structure. (b) Transfer and (c) output curves of P3-based PFETs. (d) Transfer and (e) output curves of P4-based PFETs. (f) Statistical comparison of mobility values of P1–P4. |
As anticipated, the AI-bithiazole copolymer P1 showed a p-type hole-transporting behavior, since it possesses a suitable HOMO value (−5.58 eV, Fig. 3d) for hole injection from the Au electrode to the semiconductor layer, while featuring a high-lying LUMO value (−3.07 eV, Fig. 3d) that blocks the electron injection process. Despite good backbone coplanarity, as demonstrated by the DFT calculations (Fig. 4), the hole-transporting performance of P1 remains unsatisfactory, with hole mobilities of less than 3 × 10−6 cm2 V−1 s−1. In comparison to P1, incorporation of strong ANI acceptor units into the bithiazole-bearing P2 results in significantly improved electron affinity but slightly increased ionization potential (Fig. 3d), thereby conferring suitable HOMO and LUMO energies for ambipolar charge transport. The maximum hole and electron mobilities of P2 are improved to 3 × 10−5 and 6 × 10−4 cm2 V−1 s−1 (Fig. 5f), respectively. It can be concluded that the charge-transport behavior of these polymers can be readily regulated by different fused-pentagon rings embedded in AI and ANI motifs. Interestingly, this regulation strategy is also applicable to the two DPP-bearing polymers (P3 and P4). The former exhibits typical ambipolar transport characteristics, showing nearly balanced hole and electron mobilities of up to 5 × 10−3 and 2 × 10−3 cm2 V−1 s−1 (Fig. 5f), respectively. Unlike P3, the P4-based PFET devices exhibit typical n-type transfer profiles (Fig. 5d), along with electron mobilities as high as 0.08 cm2 V−1 s−1. Taken together, a comparative investigation of charge-transport properties reveals that the dehydrogenation-oxidation of the C2-bridge in the AI core and its structural analogues can directly convert these moieties into another type of π-extended strong acceptor motif (i.e., ANI) for low bandgap conjugated copolymers; moreover, this design strategy allows effective regulation of the charge-transport polarity from p-type to ambipolar, and ultimately to n-type behavior.
Furthermore, potential applications of both ANI-2Br and AI-2Br motifs in the construction of electron-transporting polymers were studied by alternative embedding of ANI or AI motifs with the bithiazole derivatives (P1 and P2) or the diketopyrrolopyrrole derivatives (P3 and P4). Compared to both AI-based copolymers, the copolymers bearing strong ANI acceptor units show remarkable differences in terms of optoelectronic properties, such as the extended absorption band, deep-positioned LUMO value (as low as −3.91 eV), and improved carrier mobility. In particular, the charge-transport polarity change from p-type to n-type behavior was demonstrated for their film transistor devices. Among them, the best-performing polymer, P4, showed the highest electron mobility of 0.08 cm2 V−1 s−1. This work suggests that dehydrogenation-oxidation of the saturated pentagon rings in AI and its analogues is a facile and effective approach to a novel type of π-extended strong acceptor motif for low-bandgap conjugated polymers, offering a new avenue to significantly regulate their optoelectronic properties by using different fused pentagon rings.
Synthetic details, measurement, single-crystal data, FT-IR, TGA, GPC, DFT-calculation data, device fabrication, and NMR data. See DOI: https://doi.org/10.1039/d5tc01935d
CCDC 2447113 contains the supplementary crystallographic data for this paper.66
Footnote |
† M. Liao and Z. Wu contributed equally to this work. |
This journal is © The Royal Society of Chemistry 2025 |