Perpendicular sheet-like alignment of a self-driven MoS2/Si heterostructure for Vis-NIR wavelength detection†
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Abstract
In this article, a self-powered heterostructure based on perpendicularly aligned n-MoS2/p-Si was fabricated for Vis-NIR wavelength detection. In particular, MoS2 sheet-like morphology was attained via hydrothermal treatment at two crystallization temperatures (180 °C and 240 °C). The average thicknesses of the sheet-like structures were 85 and 45 nm for samples treated at 180 °C and 240 °C, respectively. The proposed geometry exhibited rectifying behavior, with the Iph/ID ratio reaching the order of ∼103 at zero applied bias, indicating the self-powered nature of the demonstrated MoS2/Si heterostructure; this was attained along with an R2 value close to unity as a function of the applied light intensity variation. Photoresponsivity (Rλ) exhibited wide reaching performance (Vis-NIR) with a peak value of 0.36 mA W−1 at 625 nm and 6 mW cm−2, this was acquired at zero applied bias. Rλ demonstrated a descending profile as the intensity of incident light increased to 17 mW cm−2 (0.19 mA W−1). The response and recovery time of the fabricated devices (180 °C and 240 °C) exhibited rather fast episodes with values of 0.178/0.181 and 0.176/0.185 s, respectively, which in turn indicated faster electron injection than recombination.
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