As a semiconductor material, silicon carbide (SiC) exhibits critical dependencies between the spatial distribution of p-type and n-type dopants and the performance of its electronic devices. Currently, n-type doping has achieved significant technological maturity, while p-type doping remains comparatively less developed. A comprehensive comparative analysis of the mechanisms governing these two doping strategies is essential to elucidate their distinct effects on the resistivity distributions during crystal growth. In this study, we demonstrate that the axial and radial resistivity distributions in p-type and n-type SiC crystals exhibit opposite trends. Through numerical simulations, we systematically analyze the effects of key growth parameters, including the growth interface temperature, C/Si ratio, and dopant partial pressures, on the resistivity profiles of both crystal types. To further elucidate the differences in resistivity distributions between the two crystals, we analyze the relationship between dopant concentration and the carbon atomic molar ratio from a thermodynamic perspective. Additionally, we assessed the incorporation efficiency of aluminum (Al) into the SiC lattice, revealing that it is two orders of magnitude lower than that of nitrogen (N) doping.
